1996. 1. 28 1/3 semiconductor technical data KN2907/a epitaxial planar pnp transistor revision no : 0 general purpose application. switching application. features low leakage current : i cex =-50na(max.) ; v ce =-30v, v eb =-0.5v. low saturation voltage : v ce(sat) =-0.4v(max.) ; i c =-150ma, i b =-15ma. complementary to the kn2222/2222a. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ characteristic symbol rating unit KN2907 KN2907a collector-base voltage v cbo -60 v collector-emitter voltage v ceo -40 -60 v emitter-base voltage v ebo -5 v collector current i c -600 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1
1996. 1. 28 2/3 revision no : 0 electrical characteristics (ta=25 1 ) KN2907/a * pulse test : pulse width # 300 s, duty cycle # 2%. characteristic symbol test condition min. typ. max. unit collector cut-off current i cex v ce =-30v, v eb =-0.5v - - -50 na collector cut-off current KN2907 i cbo v cb =-50v, i e =0 - - -20 na KN2907a - - -10 collector-base breakdown voltage v (br)cbo i c =-10 a, i e =0 -60 - - v collector-emitter * breakdown voltage KN2907 v (br)ceo i c =-10ma, i b =0 -40 - - v KN2907a -60 - - emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5 - - v dc current gain KN2907 h fe (1) i c =-0.1ma, v ce =-10v 35 - - KN2907a 75 - - KN2907 h fe (2) i c =-1.0ma, v ce =-10v 50 - - KN2907a 100 - - KN2907 h fe (3) i c =-10ma, v ce =-10v 75 - - KN2907a 100 - - KN2907 h fe (4) * i c =-150ma, v ce =-10v 100 - 300 KN2907a KN2907 h fe (5) * i c =-500ma, v ce =-10v 30 - - KN2907a 50 - - collector-emitter saturation voltage * v ce(sat) 1 i c =-150ma, i b =-15ma - - -0.4 v v ce(sat) 2 i c =-500ma, i b =-50ma - - -1.6 base-emitter saturation voltage * v be(sat) 1 i c =-150ma, i b =-15ma - - -1.3 v v be(sat) 2 i c =-500ma, i b =-50ma - - -2.6 transition frequency f t v ce =-20v, i c =-50ma, f=100mhz 200 - - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - - 8 pf
1996. 1. 28 3/3 KN2907/a revision no : 0 capacitance c (pf) 0 ob -30 -10 -3 -1 collector-base voltage v (v) cb c - v h - i c collector current i (ma) -1 -3 -10 -30 1k fe dc current gain h 10 collector current i (ma) saturation voltage -3 -1 be(sat) -30 -10 c v ,v - i fe c -300 -1k 30 50 100 300 500 -100 v =-10v ce be(sat) ce(sat) c v ,v (v) ce(sat) -100 -300 -1k -0.01 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 v be(sat) ce(sat) v ob cb -100 -200 i /i =10 c b 2 4 6 8 12 i =0 f=1mhz e 10 collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta p (mw) 25 50 75 100 125 150 175 100 200 300 400 500 600 700
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